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  Datasheet File OCR Text:
 INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
DESCRIPTION *High DC Current Gain: hFE= 1000(Min)@ IC= -20A *Low Saturation Voltage *Complement to Type BDX69/A/B/C APPLICATIONS *Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER BDX68 BDX68A VCBO Collector-Base Voltage BDX68B BDX68C BDX68 -120 -140 -60 VALUE -80 -100 UNIT
BDX68/A/B/C
V
VCEO
Collector-Emitter Voltage
VEBO IC ICM IB
B
Emitter-Base Voltage
w w
BDX68A BDX68B
BDX68C
scs .i w
-80 -100 -120 -5 -25 -40 -500 150 200 -65~200
V
.cn mi e
V A A mA W
Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range
PC TJ Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 0.875 UNIT /W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER BDX68 BDX68A IC= -100mA; L= 25mH BDX68B BDX68C VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage BDX68 BDX68A BDX68B IC= -20A; IB= -80mA IC= -20A; VCE= -3V VCB= -80V; IE= 0 VCB= -40V; IE= 0; TC=200 CONDITIONS
BDX68/A/B/C
MIN -60 -80
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
V -100 -120 -2.0 -2.5 V V
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
ww w
BDX68C BDX68 BDX68A BDX68B BDX68C
sem isc .
VCB= -100V; IE= 0 VCB= -50V; IE= 0; TC=200 VCB= -120V; IE= 0 VCB= -60V; IE= 0; TC=200 VCB= -140V; IE= 0 VCB= -70V; IE= 0; TC=200
B
.cn i
-2.0 -10 -2.0 -10 -2.0 -10 -2.0 -10
mA
VCE= -30V; IB= 0 VCE= -40V; IB= 0
B
-6.0 VCE= -50V; IB= 0
B
mA
VCE= -60V; IB= 0
B
IEBO hFE-1 hFE-2 hFE-3 COB
Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance
VEB= -5V; IC= 0 IC= -5A; VCE= -3V IC= -20A; VCE= -3V IC= -30A; VCE= -3V IE= 0 ; VCB= -10V, ftest= 1.0MHz 1000 1000 600 3000
-10
mA
pF
isc Websitewww.iscsemi.cn
2


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